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Date: September 9, 2008
Venue: Hotel Olissippo Marquês de
Sá Avenida Miguel Bombarda, n.130, 1050-167 Lisbon, Portugal
Registration: Use PATMOS 2008
Registration form. Registration for the Workshop alone or Workshop + PATMOS is
possible.
Summary: The Workshop provides an overview of the leakage power challenges in current and future CMOS technologies. The mini-tutorial presented during the morning covers basic concepts, the state of the art, and leakage aware design techniques currently available to control leakage power. The afternoon invited presentations cover recent research results and trends of leakage aware design solutions at different abstraction levels.
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08:30 - 09:00 | Registration |
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Tutorial: Leakage Power Modeling
and Control Strategies |
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09:00 - 10:15 | Tutorial
Part 1 J. Figueras, Universitat Politecnica de Catalunya, Barcelona,
Spain
CV: Joan Figueras obtained his doctoral degree at the UPC
and his PhD and MsC degrees from the University of Michigan (Ann Arbor Mich.USA).
He is currently Professor at the Electronics Engineering Dpt. of the Universitat
Politècnica de Catalunya in Barcelona, Spain. His research interests are centered
in emerging topics in low power design and advanced test of electronic circuits and
systems.
The impact of leakage power and its relative incidence in the total power consumption
will be analyzed. The main contributions to leakage and their physical nature will be
presented. The dependence of subthreshold, gate and junction leakages on the device
geometry, materials and temperature will be introduced and possible strategies to control
its impact on the leakage power consumption at device and circuit level will be discussed.
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10:45 -
12:00 | Tutorial Part 2 E. Macii, Politecnico di Torino, Torino, Italy
CV: Enrico Macii holds a Dr.Eng. degree in electrical
engineering and the Ph.D. degree in computer engineering from Politecnico di Torino, and
the Dr.Sc. degree in computer science from Università di Torino. Currently, he is
a Full Professor at the Politecnico di Torino. His research interests include several
aspects of the computer-aided design of digital integrated circuits and systems, with
particular emphasis on the development of methodologies, algorithms and tools for power
estimation and optimization of systems described at various levels of the design hierarchy.
The second part of the Tutorial will cover high level
techniques to control leakage power. Power gating strategies based on Sleep Transistor
Insertion (STI) will be discussed showing different solutions for the interfacing of sleep
regions (Voltage Anchor Circuits). Leakage power in SRAM and CACHE memories will be
presented with techniques to control leakage power. Finally, architectural techniques such
as Adaptive Body Bias (ABB), Adaptive Voltage Scaling (AVS), and combinations of ABB&AVS
will be shown and its efficiency discussed.
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13:30 -
14:30 | Leakage in Nanoscale Technologies: Implications and
Perspectives for Future CMOS Design K. Roy, Purdue University, ECE, West
Lafayette, Indiana, USA
CV: Kaushik Roy received the B.Tech. degree from the
Indian Institute of Technology, Kharagpur, India, and the Ph.D. degree in electrical and
computer engineering from the University of Illinois at Urbana-Champaign. He was with the
Semiconductor Process and Design Center of Texas Instruments, Dallas, TX. He joined the
electrical and computer engineering faculty at Purdue University, West Lafayette, IN,
where he is currently a Professor and University Faculty Scholar. His research interests
include VLSI design/CAD for nanoscale silicon and non-silicon technologies, low-power
electronics for portable computing and wireless communications, VLSI testing and
verification, and reconfigurable computing.
Transistors are becoming leakier every technology generation
and to add to the problem, process parameter variations is making the leakage spread to
be significant. In this talk I will explore the implications of current and new device
technology and architecture on leakage current and the leakage spread, and possible
circuit and architecture level solutions to deal with the problem.
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14:30 -
15:30 | SRAM Design Challenges for nano-metric CMOS M. Sachdev,
EC Engineering Dpt. at the University of Waterloo, Canada
CV: Manoj Sachdev is a University Research Chair
professor in Electrical and Computer Engineering department at the University of Waterloo,
Canada. His research interests include low power, high speed circuit design; test and
manufacturing issues of integrated circuits. He has contributed to five books, more than
150 technical papers, and holds more than 25 granted and pending patents.
Embedded SRAMs often occupy vast majority of the total
area of modern System on Chips (SoCs).
Embedded SRAMs significantly impacts power, performance, testability and yield of
complex SoCs. In
this presentation, salient design challenges and design techniques will be
discussed to reduce leakage as
well as active power consumption while maintaining data stability in nano-metric
SRAMs.
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16:00 - 17:00 | Leakage Estimation at Higher Levels of Abstraction T. Murgan, Quimonda AG,
Neubiberg, Germany
CV: Tudor Murgan studied between 1996 and 2001 at the
Faculty of Electronics and Communications
at the University "Politehnica" of Bucharest, Romania and received in 2006 the PhD
title from the
Darmstadt Univ. of Technology in Germany. Currently he works for Qimonda AG in
Munich, and his
interests and main working fields include low-power and high-speed circuit design,
statistical methods for
CAD, and interconnect modeling and optimization.
Since nowadays power consumption and especially the
leakage-induced one represent potential limits for
technology scaling, it is of utmost importance to shift the estimation accuracy
typical for low abstraction
layers to higher ones. This talk focuses on stochastic techniques - and their
applicability and accuracy -
that can be employed to efficiently estimate power consumption early in the design
flow, i.e. at
architectural and system level.
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17:00 - 17:30 | General discussion and closing All participants |
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